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1 IPD50R380CE rev.2.3,2016-06-13 final data sheet dpak mosfet 500vcoolmosacepowertransistor coolmos?isarevolutionarytechnologyforhighvoltagepower mosfets,designedaccordingtothesuperjunction(sj)principleand pioneeredbyinfineontechnologies.coolmos?ceisa price-performanceoptimizedplatformenablingtotargetcostsensitive applicationsinconsumerandlightingmarketsbystillmeetinghighest efficiencystandards.thenewseriesprovidesallbenefitsofafast switchingsuperjunctionmosfetwhilenotsacrificingeaseofuseand offeringthebestcostdownperformanceratioavailableonthemarket. features ?extremelylowlossesduetoverylowfomrdson*qgandeoss ?veryhighcommutationruggedness ?easytouse/drive ?pb-freeplating,halogenfreemoldcompound ?qualifiedforstandardgradeapplications applications pfcstages,hardswitchingpwmstagesandresonantswitchingstages fore.g.pcsilverbox,adapter,lcd&pdptvandindoorlighting. pleasenote:formosfetparallelingtheuseofferritebeadsonthegate orseparatetotempolesisgenerallyrecommended table1keyperformanceparameters parameter value unit v ds @ t j,max 550 v r ds(on),max 0.38 w i d 14.1 a q g,typ 24.8 nc i d,pulse 32.4 a e oss @ 400v 2.54 j type/orderingcode package marking relatedlinks IPD50R380CE pg-to 252 50s380ce see appendix a tab 1 2 3 d r a i n p i n 2 g a t e p i n 1 s o u r c e p i n 3
2 500vcoolmosacepowertransistor IPD50R380CE rev.2.3,2016-06-13 final data sheet tableofcontents description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 appendix a . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 tab 1 2 3 d r a i n p i n 2 g a t e p i n 1 s o u r c e p i n 3
3 500vcoolmosacepowertransistor IPD50R380CE rev.2.3,2016-06-13 final data sheet 1maximumratings at t j =25c,unlessotherwisespecified table2maximumratings values min. typ. max. parameter symbol unit note/testcondition continuous drain current 1) i d - - - - 14.1 8.9 a t c = 25c t c = 100c pulsed drain current 2) i d,pulse - - 32.4 a t c =25c avalanche energy, single pulse e as - - 173 mj i d =4a; v dd = 50v avalanche energy, repetitive e ar - - 0.26 mj i d =4a; v dd = 50v avalanche current, repetitive i ar - - 4.0 a - mosfet dv/dt ruggedness dv/dt - - 50 v/ns v ds =0...400v gate source voltage v gs -20 -30 - - 20 30 v static; ac (f>1 hz) power dissipation (non fullpak) to-252 p tot - - 98 w t c =25c operating and storage temperature t j , t stg -55 - 150 c - continuous diode forward current i s - - 10 a t c =25c diode pulse current 2) i s,pulse - - 32.4 a t c = 25c reverse diode dv/dt 3) dv/dt - - 15 v/ns v ds =0...400v, i sd <= i s , t j =25c, t cond <2 m s maximum diode commutation speed 3) di f /dt - - 500 a/ m s v ds =0...400v, i sd <= i s , t j =25c, t cond <2 m s 2thermalcharacteristics table3thermalcharacteristics(nonfullpak)to-252 values min. typ. max. parameter symbol unit note/testcondition thermal resistance, junction - case r thjc - - 1.27 c/w - thermal resistance, junction - ambient r thja - - 62 c/w leaded soldering temperature, wavesoldering only allowed at leads t sold - - 260 c 1.6mm (0.063 in.) from case for 10s 1) limited by t j max <150c, maximum duty cycle d = 0.5 2) pulse width t p limited by t j,max 3) v dclink =400v; v ds,peak < v (br)dss ;identicallowsideandhighsideswitchwithidentical r g tab 1 2 3 d r a i n p i n 2 g a t e p i n 1 s o u r c e p i n 3
4 500vcoolmosacepowertransistor IPD50R380CE rev.2.3,2016-06-13 final data sheet 3electricalcharacteristics table4staticcharacteristics values min. typ. max. parameter symbol unit note/testcondition drain-source breakdown voltage v (br)dss 500 - - v v gs =0v, i d =1ma gate threshold voltage v (gs)th 2.50 3 3.50 v v ds = v gs , i d =0.26ma zero gate voltage drain current i dss - - - 10 1 - m a v ds =500v, v gs =0v, t j =25c v ds =500v, v gs =0v, t j =150c gate-source leakage curent i gss - - 100 na v gs =20v, v ds =0v drain-source on-state resistance r ds(on) - - 0.35 0.90 0.38 - w v gs =13v, i d =3.2a, t j =25c v gs =13v, i d =3.2a, t j =150c gate resistance r g - 3 - w f =1mhz,opendrain table5dynamiccharacteristics values min. typ. max. parameter symbol unit note/testcondition input capacitance c iss - 584 - pf v gs =0v, v ds =100v, f =1mhz output capacitance c oss - 40 - pf v gs =0v, v ds =100v, f =1mhz effective output capacitance, energy related 1) c o(er) - 32 - pf v gs =0v, v ds =0...400v effective output capacitance, time related 2) c o(tr) - 133 - pf i d =constant, v gs =0v, v ds =0...400v turn-on delay time t d(on) - 7.2 - ns v dd =400v, v gs =13v, i d =3.9a, r g =3.4 w rise time t r - 5.6 - ns v dd =400v, v gs =13v, i d =3.9a, r g =3.4 w turn-off delay time t d(off) - 35 - ns v dd =400v, v gs =13v, i d =3.9a, r g =3.4 w fall time t f - 8.6 - ns v dd =400v, v gs =13v, i d =3.9a, r g =3.4 w table6gatechargecharacteristics values min. typ. max. parameter symbol unit note/testcondition gate to source charge q gs - 3.1 - nc v dd =400v, i d =3.9a, v gs =0to10v gate to drain charge q gd - 13.1 - nc v dd =400v, i d =3.9a, v gs =0to10v gate charge total q g - 24.8 - nc v dd =400v, i d =3.9a, v gs =0to10v gate plateau voltage v plateau - 5.3 - v v dd =400v, i d =3.9a, v gs =0to10v 1) c o(er) isafixedcapacitancethatgivesthesamestoredenergyas c oss while v ds isrisingfrom0to80%v (br)dss 2) c o(tr) isafixedcapacitancethatgivesthesamechargingtimeas c oss while v ds isrisingfrom0to80%v (br)dss tab 1 2 3 d r a i n p i n 2 g a t e p i n 1 s o u r c e p i n 3
5 500vcoolmosacepowertransistor IPD50R380CE rev.2.3,2016-06-13 final data sheet table7reversediodecharacteristics values min. typ. max. parameter symbol unit note/testcondition diode forward voltage v sd - 0.85 - v v gs =0v, i f =3.9a, t f =25c reverse recovery time t rr - 207 - ns v r =400v, i f =3.9a,d i f /d t =100a/s reverse recovery charge q rr - 1.7 - c v r =400v, i f =3.9a,d i f /d t =100a/s peak reverse recovery current i rrm - 15.5 - a v r =400v, i f =3.9a,d i f /d t =100a/s tab 1 2 3 d r a i n p i n 2 g a t e p i n 1 s o u r c e p i n 3
6 500vcoolmosacepowertransistor IPD50R380CE rev.2.3,2016-06-13 final data sheet 4electricalcharacteristicsdiagrams diagram1:powerdissipation t c [c] p tot [w] 0 40 80 120 160 0 10 20 30 40 50 60 70 80 90 100 p tot =f( t c ) diagram2:safeoperatingarea v ds [v] i d [a] 10 0 10 1 10 2 10 3 10 -2 10 -1 10 0 10 1 10 2 1 s 10 s 100 s 1 ms 10 ms dc i d =f( v ds ); t c =25c; d =0;parameter: t p diagram3:safeoperatingarea v ds [v] i d [a] 10 0 10 1 10 2 10 3 10 -2 10 -1 10 0 10 1 10 2 1 s 10 s 100 s 1 ms 10 ms dc i d =f( v ds ); t c =80c; d =0;parameter: t p diagram4:max.transientthermalimpedance t p [s] z thjc [k/w] 10 -5 10 -4 10 -3 10 -2 10 -1 10 -2 10 -1 10 0 10 1 0.5 0.2 0.1 0.05 0.02 0.01 single pulse z thjc =f( t p );parameter: d=t p / t tab 1 2 3 d r a i n p i n 2 g a t e p i n 1 s o u r c e p i n 3
7 500vcoolmosacepowertransistor IPD50R380CE rev.2.3,2016-06-13 final data sheet typ.outputcharacteristicstj=25c v ds [v] i d [a] 0 5 10 15 20 0 5 10 15 20 25 30 35 40 20 v 10 v 8 v 7 v 6 v 5.5 v 5 v 4.5 v i d =f( v ds ); t j =25c;parameter: v gs typ.outputcharacteristicstj=125c v ds [v] i d [a] 0 5 10 15 20 0 5 10 15 20 25 20 v 10 v 8 v 7 v 6 v 5.5 v 5 v 4.5 v i d =f( v ds ); t j =125c;parameter: v gs typ.drain-sourceon-stateresistance i d [a] r ds(on) [ w ] 0 5 10 15 20 0.6 0.8 1.0 1.2 1.4 5 v 5.5 v 6 v 6.5 v 7 v 10 v r ds(on) =f( i d ); t j =125c;parameter: v gs drain-sourceon-stateresistance t j [c] r ds(on) [ w ] -50 -25 0 25 50 75 100 125 150 175 0.0 0.2 0.4 0.6 0.8 1.0 1.2 98% typ r ds(on) =f( t j ); i d =3.2a; v gs =13v tab 1 2 3 d r a i n p i n 2 g a t e p i n 1 s o u r c e p i n 3
8 500vcoolmosacepowertransistor IPD50R380CE rev.2.3,2016-06-13 final data sheet typ.transfercharacteristics v gs [v] i d [a] 0 2 4 6 8 10 0 5 10 15 20 25 30 35 150 c 25 c i d =f( v gs ); v ds =20v;parameter: t j typ.gatecharge q gate [nc] v gs [v] 0 10 20 30 0 1 2 3 4 5 6 7 8 9 10 120 v 400 v v gs =f( q gate ); i d =3.9apulsed;parameter: v dd avalancheenergy t j [c] e as [mj] 0 25 50 75 100 125 150 175 0 20 40 60 80 100 120 140 160 180 200 e as =f( t j ); i d =4a; v dd =50v drain-sourcebreakdownvoltage t j [c] v br(dss) [v] -60 -20 20 60 100 140 180 440 460 480 500 520 540 560 580 v br(dss) =f( t j ); i d =1ma tab 1 2 3 d r a i n p i n 2 g a t e p i n 1 s o u r c e p i n 3
9 500vcoolmosacepowertransistor IPD50R380CE rev.2.3,2016-06-13 final data sheet typ.capacitances v ds [v] c [pf] 0 100 200 300 400 500 10 0 10 1 10 2 10 3 10 4 ciss coss crss c =f( v ds ); v gs =0v; f =1mhz typ.cossstoredenergy v ds [v] e oss [j] 0 100 200 300 400 500 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 e oss = f (v ds ) forwardcharacteristicsofreversediode v sd [v] i f [a] 0.4 0.6 0.8 1.0 1.2 1.4 10 -1 10 0 10 1 10 2 125 c 25 c i f =f( v sd );parameter: t j tab 1 2 3 d r a i n p i n 2 g a t e p i n 1 s o u r c e p i n 3
10 500vcoolmosacepowertransistor IPD50R380CE rev.2.3,2016-06-13 final data sheet 5testcircuits table8diodecharacteristics table9switchingtimes table10unclampedinductiveload tab 1 2 3 d r a i n p i n 2 g a t e p i n 1 s o u r c e p i n 3 test circuit for diode characteristics diode recovery waveform t v , i i rrm i f v ds 10 % i rrm t rr t f t s q f q s di f / dt di rr / dt v ds ( peak ) q rr = q f + q s t rr = t f + t s v ds i f v ds i f r g 1 r g 2 r g 1 = r g 2 switching times test circuit for inductive load switching times waveform v ds v gs t d ( on ) t d ( off ) t r t on t f t off 10 % 90 % v ds v gs unclamped inductive load test circuit unclamped inductive waveform v ds v ( br ) ds i d v ds v ds i d
11 500vcoolmosacepowertransistor IPD50R380CE rev.2.3,2016-06-13 final data sheet 6packageoutlines figure1outlinepg-to252,dimensionsinmm/inches tab 1 2 3 d r a i n p i n 2 g a t e p i n 1 s o u r c e p i n 3 test circuit for diode characteristics diode recovery waveform t v , i i rrm i f v ds 10 % i rrm t rr t f t s q f q s di f / dt di rr / dt v ds ( peak ) q rr = q f + q s t rr = t f + t s v ds i f v ds i f r g 1 r g 2 r g 1 = r g 2 switching times test circuit for inductive load switching times waveform v ds v gs t d ( on ) t d ( off ) t r t on t f t off 10 % 90 % v ds v gs unclamped inductive load test circuit unclamped inductive waveform v ds v ( br ) ds i d v ds v ds i d 2.0 issue date european projection 0 4mm 2.0 scale 0 revision 01-09-2015 05 document no. z8b00003328 *) mold flash not included millimeters 4.57 (bsc) 2.29 (bsc) l4 d n h e1 e1 e e d1 l3 1.18 0.51 0.90 5.02 9.40 6.40 4.70 5.97 3 b3 a dim b2 c b c2 a1 5.00 min 2.16 0.64 0.46 0.65 0.46 0.00 0.046 0.020 0.035 0.198 0.252 0.185 0.235 0.370 1.70 1.00 5.60 5.84 6.22 6.73 1.25 10.48 0.180 (bsc) 0.090 (bsc) 3 0.067 0.220 0.039 0.230 0.265 0.049 0.245 0.413 0.197 0.085 0.025 0.018 0.026 0.018 0.000 5.50 max 2.41 0.15 1.15 0.60 0.89 0.98 inches min 0.217 max 0.006 0.095 0.035 0.024 0.045 0.039 l f6 f1 f2 f3 f4 f5 1.20 6.40 10.60 2.20 5.80 5.76 0.417 0.252 0.087 0.228 0.227 0.047
12 500vcoolmosacepowertransistor IPD50R380CE rev.2.3,2016-06-13 final data sheet 7appendixa table11relatedlinks ? ifxcoolmoswebpage: www.infineon.com ? ifxdesigntools: www.infineon.com tab 1 2 3 d r a i n p i n 2 g a t e p i n 1 s o u r c e p i n 3 test circuit for diode characteristics diode recovery waveform t v , i i rrm i f v ds 10 % i rrm t rr t f t s q f q s di f / dt di rr / dt v ds ( peak ) q rr = q f + q s t rr = t f + t s v ds i f v ds i f r g 1 r g 2 r g 1 = r g 2 switching times test circuit for inductive load switching times waveform v ds v gs t d ( on ) t d ( off ) t r t on t f t off 10 % 90 % v ds v gs unclamped inductive load test circuit unclamped inductive waveform v ds v ( br ) ds i d v ds v ds i d 2.0 issue date european projection 0 4mm 2.0 scale 0 revision 01-09-2015 05 document no. z8b00003328 *) mold flash not included millimeters 4.57 (bsc) 2.29 (bsc) l4 d n h e1 e1 e e d1 l3 1.18 0.51 0.90 5.02 9.40 6.40 4.70 5.97 3 b3 a dim b2 c b c2 a1 5.00 min 2.16 0.64 0.46 0.65 0.46 0.00 0.046 0.020 0.035 0.198 0.252 0.185 0.235 0.370 1.70 1.00 5.60 5.84 6.22 6.73 1.25 10.48 0.180 (bsc) 0.090 (bsc) 3 0.067 0.220 0.039 0.230 0.265 0.049 0.245 0.413 0.197 0.085 0.025 0.018 0.026 0.018 0.000 5.50 max 2.41 0.15 1.15 0.60 0.89 0.98 inches min 0.217 max 0.006 0.095 0.035 0.024 0.045 0.039 l f6 f1 f2 f3 f4 f5 1.20 6.40 10.60 2.20 5.80 5.76 0.417 0.252 0.087 0.228 0.227 0.047
13 500vcoolmosacepowertransistor IPD50R380CE rev.2.3,2016-06-13 final data sheet revisionhistory IPD50R380CE revision:2016-06-13,rev.2.3 previous revision revision date subjects (major changes since last revision) 2.0 2012-08-24 release of final version 2.1 2013-07-16 update to halogen free mold compound 2.2 2015-11-17 update to qualified for standard grade and updated package drawing 2.3 2016-06-13 updated id ratings, zth, soa and pd curves trademarksofinfineontechnologiesag aurix?,c166?,canpak?,cipos?,coolgan?,coolmos?,coolset?,coolsic?,corecontrol?,crossave?,dave?,di-pol?,drblade?, easypim?,econobridge?,econodual?,econopack?,econopim?,eicedriver?,eupec?,fcos?,hitfet?,hybridpack?,infineon?, isoface?,isopack?,i-wafer?,mipaq?,modstack?,my-d?,novalithic?,omnitune?,optiga?,optimos?,origa?,powercode?, primarion?,primepack?,primestack?,profet?,pro-sil?,rasic?,real3?,reversave?,satric?,sieget?,sipmos?,smartlewis?, solidflash?,spoc?,tempfet?,thinq?,trenchstop?,tricore?. trademarksupdatedaugust2015 othertrademarks allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. welistentoyourcomments anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com publishedby infineontechnologiesag 81726mnchen,germany ?2016infineontechnologiesag allrightsreserved. legaldisclaimer theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.with respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,infineontechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. information forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestinfineon technologiesoffice( www.infineon.com ). warnings duetotechnicalrequirements,componentsmaycontaindangeroussubstances.forinformationonthetypesinquestion, pleasecontactthenearestinfineontechnologiesoffice. theinfineontechnologiescomponentdescribedinthisdatasheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofinfineontechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. tab 1 2 3 d r a i n p i n 2 g a t e p i n 1 s o u r c e p i n 3 test circuit for diode characteristics diode recovery waveform t v , i i rrm i f v ds 10 % i rrm t rr t f t s q f q s di f / dt di rr / dt v ds ( peak ) q rr = q f + q s t rr = t f + t s v ds i f v ds i f r g 1 r g 2 r g 1 = r g 2 switching times test circuit for inductive load switching times waveform v ds v gs t d ( on ) t d ( off ) t r t on t f t off 10 % 90 % v ds v gs unclamped inductive load test circuit unclamped inductive waveform v ds v ( br ) ds i d v ds v ds i d 2.0 issue date european projection 0 4mm 2.0 scale 0 revision 01-09-2015 05 document no. z8b00003328 *) mold flash not included millimeters 4.57 (bsc) 2.29 (bsc) l4 d n h e1 e1 e e d1 l3 1.18 0.51 0.90 5.02 9.40 6.40 4.70 5.97 3 b3 a dim b2 c b c2 a1 5.00 min 2.16 0.64 0.46 0.65 0.46 0.00 0.046 0.020 0.035 0.198 0.252 0.185 0.235 0.370 1.70 1.00 5.60 5.84 6.22 6.73 1.25 10.48 0.180 (bsc) 0.090 (bsc) 3 0.067 0.220 0.039 0.230 0.265 0.049 0.245 0.413 0.197 0.085 0.025 0.018 0.026 0.018 0.000 5.50 max 2.41 0.15 1.15 0.60 0.89 0.98 inches min 0.217 max 0.006 0.095 0.035 0.024 0.045 0.039 l f6 f1 f2 f3 f4 f5 1.20 6.40 10.60 2.20 5.80 5.76 0.417 0.252 0.087 0.228 0.227 0.047

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